4inch Semi-insulating SiC Substrate HPSI

As an advanced semi-insulating SiC substrates manufacturers, we offer high-purity sic wafers with diameters ranging from 4-inch to 8-inch. Our standard product features a substrate thickness of 500µm ±25µm and boasts an extremely high bulk resistivity of >1E7 Ω·cm. Each wafer undergoes precision double-side polishing to ensure an epitaxy-ready surface with exceptional morphology and minimal defects, providing an ideal foundation for demanding high-frequency and high-power applications.

Semi-insulating SiC Substrate Applications

High-purity semi-insulating (HPSI) SiC Substrates are primarily used as substrate materials for high-frequency, high-power, and high-temperature electronic devices, where excellent electrical insulation is critical. Key applications include:

Radio Frequency (RF) and Microwave Electronics: They serve as the foundational substrate for GaN (Gallium Nitride) epitaxial layers in RF devices such as high-electron-mobility transistors (HEMTs). These components are essential for 5G/6G communication base stations, radar systems, satellite communications, and other high-frequency applications.

High-Power and High-Temperature Devices: Used as substrates for certain types of high-voltage SiC-based devices that require an insulating substrate to minimize parasitic capacitance and current leakage.

Sensors and Specialized Electronics: Suitable for sensors operating in extreme environments (e.g., high temperature, radiation) due to SiC’s inherent robustness.

Material Characteristics:

Extremely High Electrical Resistivity: The defining characteristic. Through careful control of crystal growth (typically by the Physical Vapor Transport method) and minimization of impurities (especially boron and nitrogen), the resistivity can exceed 10^5 Ω·cm, often reaching 10^10 Ω·cm or higher at room temperature. This effectively prevents unwanted current flow through the substrate.

Wide Bandgap: SiC has a large bandgap (~3.26 eV for the common 4H polytype), which is fundamental to its high breakdown electric field, thermal stability, and radiation hardness.

High Thermal Conductivity: (~ 3.7-4.9 W/cm·K for 4H-SiC, rivaling copper). This allows for efficient heat dissipation from active device layers, which is crucial for maintaining performance and reliability in high-power-density applications.