SiC Epitaxy Wafer

As the trusted SiC Epitaxy Wafer Manufacturer, HMT can produce 4 inch 6 inch and 8 inch SiC on SiC Epi Wafers. We have N type and P type epi layer and use production grade N type SiC Substrate for our SiC Epitaxy Wafer. We support customize SiC epi layer thickness and doping concerntration. Our professional engineer will evaluate your spec based on our manufacturing process.

Epitaxy” refers to the growth of a higher-quality single-crystal material on the surface of a SiC substrate. Growing a SiC epitaxial layer on the surface of a conductive SiC substrate is called homoepitaxy. Growing a GaN epitaxial layer on a semi-insulating SiC substrate is referred to as heteroepitaxy.

During the growth process of SiC crystals, defects and impurities are inevitably introduced, resulting in suboptimal quality and performance of the substrate material. The growth of an epitaxial layer can eliminate certain defects in the substrate, leading to a more orderly lattice arrangement. Currently, almost all devices are fabricated on epitaxial layers, making the quality of epitaxy critically important for device performance.

SiC Epi technology involves growing a high-quality epitaxial layer on a SiC substrate to achieve specific material properties. This epitaxial layer not only inherits the excellent characteristics of the substrate but also provides an ideal foundation for subsequent device manufacturing by precisely controlling parameters. Such as doping concentration, thickness, and crystal orientation. The fabrication process of SiC power devices differs from that of traditional silicon power devices. They cannot be directly fabricated on SiC single-crystal materials but must be manufactured on high-quality epitaxial materials grown on conductive single-crystal substrates, with various devices fabricated on the epitaxial layer.