Semi-insulating SiC Wafer Manufacturers

As 4H-SiC Wafer Manufacturer in China, we also produce semi-insualting SiC Wafer with 4 inch 6 inch and 8 inch in D Grade R Grade and P Grade. Our SI type SiC Wafers’s resistivity ≥1E7ohm.com，wafer thickness 500um±25um, ultralow MPD and double side polished Ra≤0.2nm. Semi-insulating SiC Wafer Manufacturers HMT always provide very competitive price for all customers. Don’t hesistate to contact us now.

Semi-insulating SiC Substrates: By growing GaN epitaxial layers on semi-insulating SiC substrates, GaN-on-SiC epitaxial wafers are produced, which are further manufactured into gallium nitride microwave radio frequency devices. Semi-insulating Silicon Carbide Substrates: Suitable for high-frequency, high-temperature, and other working environments, primarily used in fields such as 5G communications, radar systems, and defense applications.

Semi-insulating SiC Wafer Applications

AI Glasses Optical Waveguides

For the optical systems of AI glasses,SiC-based Surface Relief Grating (SRG) waveguides represent a revolutionary innovation. Silicon carbide offers advantages such as a high refractive index, wide field of view (FOV), and full-color integration. Notably, its exceptional refractive index (ranging from 2.6 to 2.7) enables the integration of RGB color channels within a single layer, effectively solving the rainbow effect. Compared to traditional multi-layer solutions, this significantly reduces the device’s weight, thickness, and manufacturing complexity. This advancement positions silicon carbide SRG waveguides as the optimal choice for next-generation AR displays pursuing compact form factors and immersive visual experiences.

TF-SAW High-End Filters

Thin-Film Surface Acoustic Wave (TF-SAW) filters represent a major technological advancement in the field of acoustic filters, featuring high frequency, high selectivity, and low insertion loss. TF-SAW filters based on Piezoelectric-on-Insulator (POI) substrates offer greater cost-effectiveness and simpler production compared to Bulk Acoustic Wave (BAW) filters, making them an ideal choice for supporting higher frequency bands in consumer electronics and 5G applications. Notably, TF-SAW filters utilizing silicon carbide substrates demonstrate outstanding performance in high-frequency operation, high Q-factor, power handling capacity, and temperature stability. They can support frequency bands above 3.3 GHz, making them suitable for high-end smartphones, 5G infrastructure, and AIoT devices.

Thermal Management Components

Silicon carbide is widely used in heat dissipation and heat sink applications—including semiconductors, thermal management systems, 5G communications, high-power LED lighting, electric vehicles, and renewable energy systems—due to its properties such as high thermal conductivity, low coefficient of thermal expansion, high hardness, chemical stability, and lightweight nature. It enhances device operational efficiency and reliability, reduces the weight of thermal management systems, and extends equipment lifespan. Compared to traditional thermal management materials like copper and aluminum nitride, silicon carbide’s thermal conductivity is 1.2 times that of copper and over twice that of aluminum nitride. This makes silicon carbide more suitable for scenarios requiring rapid heat dissipation to protect sensitive electronic components or to maintain stable operation in high-power-density devices.