900um SiC Raw-Cut Wafer

What is Raw-Cut SiC Wafer？Let HMT answer your question. As the Raw-cut SiC Wafer Manufacturer, we also named as As-cut SiC Wafer or Unpolished SiC Wafer. Cutting from our SiC boule/Ingot and without lapping and polishing processing. HMT can provides 2 inch 4 inch 6 inch and 8 inch Raw-Cut SiC Wafers for Conductive N type with very competitive price on the market. What’s more, most Raw-cut SiC Wafer Manufacturer cant’ support customized thickness, But we can! we support customizing thickness of unpolished SiC wafers, like 600um 800um 1200um etc….Just let us know your requirements, we’ll do our best to support you!

Item	Spec
Dimension	2inch 4inch 6inch 8inch
Dopant	Nitrogen
Thickness	Support Customization
Resistivity	0.015-0.025ohm.cm
TTV/Bow/Warp	Support Customization
Surface finish	Unpolished

Raw-cut SiC Wafer for CMP Application

Chemical Mechanical Polishing (CMP) is a surface finishing technique that combines chemical etching with mechanical grinding (Figure 1). For silicon carbide (SiC), the chemical process involves reactions between chemicals in the polishing slurry and the SiC surface to form a softer modified layer (such as silicon dioxide or metal oxides), making it more susceptible to mechanical removal. The mechanical action employs nanoscale abrasives (e.g., silica or alumina) to physically abrade the surface and remove material. Through this alternating cycle of chemical softening and mechanical removal, an atomically smooth surface (with roughness <0.5 nm) can be achieved.

The production of silicon carbide (SiC) monocrystalline substrates requires a series of processes such as cutting, grinding, and polishing to ultimately obtain ultra-smooth SiC substrate wafers. Among these, polishing is divided into coarse polishing and fine polishing:

• The purpose of coarse polishing is to reduce the surface roughness of the substrate to the nanometer level.
• Fine polishing is the final step in the fabrication of SiC substrate wafers, directly determining whether the processed substrate can be put into production. The goal of fine polishing is to further improve the surface quality of the SiC substrate, achieving an ultra-smooth surface, typically requiring a surface roughness of less than 0.2 nm.