Conductive SiC Boule

Partner with HMT – Your Professional SiC Boule Manufacturer in China. We supply conductive N type SiC boules in 4-inch, 6-inch, and 8-inch diameters at market competitive prices. Both D-grade (for laser cutting machine testing, grind wheel R&D application) and P-grade (mass production of SiC substrates) boules available. As a trusted SiC Boule Manufacturer, we also provide 2 inch SiC boules and customized SiC as-cut wafers. Contact us for detailed SiC boules specifications now!

SiC Boule Pictures

Three Mainstream Growth Technology

1. Physical Vapor Transport (PVT)
As the most mature and widely adopted method, PVT involves high-temperature decomposition of polycrystalline SiC source material, with subsequent vapor-phase transport and recrystallization of Si/C atoms on a seed crystal. Characterized by simple equipment and low cost, this method has achieved industrialization for 6-inch SiC substrates.

2.High-Temperature Chemical Vapor Deposition (HTCVD/HT-CVD)
In this process, Si- and C-source gases react at ~2100°C to deposit and grow SiC single crystals on the substrate. Its key advantage is enabling prolonged continuous crystal growth with rates reaching 2-3 mm/h. HTCVD has successfully produced 4-inch and 6-inch crystals.

3.Top-Seeded Solution Growth (TSSG) / Liquid-Phase Epitaxy (LPE)
Represented by the TSSG method, this liquid-phase approach grows crystals through dissolution and re-precipitation of Si/C elements in a high-temperature solution. Operating below 2000°C under near-thermodynamic equilibrium, it imposes lower equipment demands and theoretically yields higher-quality crystals.

Core advantages include:

Simplified p-type doping
Already demonstrated for 4-inch crystals, TSSG is regarded as a promising route for larger-size, high-quality, and cost-effective SiC single crystals.

Elimination of micropipe defects

Highly tunable growth (via solution composition, temperature, seed rotation/pulling speed)

Easier diameter scaling