800um 6 inch SiC Wafer

While most 6 inch SiC Wafer Manufacturer offer substrates limited to 350μm thickness, HMT company can produce both 500um and 800um thickness 6 inch SiC Wafers options, ideal for high-power, high-voltage applications demanding robust thermal management. With many years produce experience, our P grade SiC Wafer’ micropipe density is ≤0.2ea/cm². Ensuring exceptional crystal quality for demanding semiconductor devices.

Meanwhile, We also cater to R&D needs with specialized Research (R) Grade and Dummy (D) Grade SiC substrates. These cost-effective solutions accelerate prototyping, process optimization, and academic studies without compromising structural integrity. HMT always provides SiC substrates with high cost effectiveness for domestic and foreign customers.

6 inch SiC Wafer Basic Spec:

Poly type: 4H
Diameter: 150 ± 0.25 mm
Thickness: 800±25μm (Support Customization)
Surface orientation: 4° toward <11-20> ± 0.5º
Dopant: n-type Nitrogen
Resistivity: 0.015~0.028ohm·cm
Surface finish: Si-face CMP
Back finish: C-face polished
Package: 25PCS in one cassette

Globally trusted SiC Wafer Manufacturer by leading power electronics, EV, and renewable energy innovators. HMT delivers unmatched cost-performance through vertical integration and advanced process controls. Our certified manufacturing guarantees batch-to-batch consistency, rapid turnaround, and dedicated technical support.

Silicon Carbide (SiC) exists in multiple crystalline structures known as polytypes, including 3C-SiC, 6H-SiC, and 4H-SiC. Among these, 4H-SiC is currently the preferred choice for practical power device manufacturing due to its superior electronic properties.

Single-crystal 4H-SiC wafers with diameters ranging from 2-inch 4-inch 6-inch 8-inch can purchased from Homray Material Technology, meeting the demands of high-performance power electronics applications.

SiC Material Features

Silicon Carbide (SiC), a compound semiconductor composed of silicon (Si) and carbon (C), offers superior properties compared to silicon. SiC exhibits 10× higher dielectric breakdown field strength, 3× wider bandgap, and 3× greater thermal conductivity than Si. Both p-type and n-type regions—essential for forming device structures in semiconductor materials—can be readily achieved in SiC.

These characteristics make SiC an exceptionally attractive material for power devices that far outperform their silicon counterparts. SiC-based devices can:

• Withstand higher breakdown voltages
• Deliver lower resistivity
• Operate reliably at elevated temperatures